需要更多?
数量 | 价钱 (含税) |
---|---|
1+ | CNY27.210 (CNY30.7473) |
10+ | CNY23.800 (CNY26.894) |
25+ | CNY19.720 (CNY22.2836) |
50+ | CNY17.680 (CNY19.9784) |
100+ | CNY16.320 (CNY18.4416) |
250+ | CNY15.230 (CNY17.2099) |
500+ | CNY15.180 (CNY17.1534) |
1000+ | CNY15.120 (CNY17.0856) |
产品概述
MPQ6528 is a H-bridge gate driver IC that can drive two half-bridges with four N-channel power MOSFETs across a wide 5V to 60V input voltage (VIN) range. The device’s integrated, regulated charge pump generates gate driver power (VREG), and a bootstrap (BST) capacitor generates the supply voltage for the high-side MOSFET (HS-FET) driver. An internal trickle-charge circuit maintains a sufficient HS-FET gate driver voltage even at 100% duty cycle. Full protection features include configurable short-circuit protection (SCP), over-current protection (OVP), under-voltage lockout (UVLO) protection, adjustable dead time (DT) control, and thermal shutdown. The MPQ6528 is available in a QFN-28 package with an exposed thermal pad. Applications include brushed DC motors, automotive actuators, gate openers, audio amplifiers and power converters.
- Charge pump gate driver supply
- Bootstrap high-side MOSFET (HSFET) driver with trickle-charge circuit for 100% duty cycle operation
- Low-power sleep mode
- Overcurrent protection (OCP)
- Adjustable dead time (DT) control to prevent shoot-through
- Fault indication output
- Thermally enhanced surface-mount package
- Available in AEC-Q100 grade 1
注释
MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.
技术规格
1放大器
半桥
28引脚
表面安装
800mA
5V
-40°C
880µs
-
-
MOSFET
WFQFN-EP
PWM
1A
60V
150°C
-
AEC-Q100
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书