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BSH103BKR
功率场效应管, MOSFET, N通道, 30 V, 1 A, 0.27 ohm, SOT-23, 表面安装
产品概述
BSH103BKR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Low threshold voltage, very fast switching
- ElectroStatic Discharge (ESD) protection > 2kV HBM
- Drain-source voltage is 30V max at Tj = 25°C
- Gate-source voltage is 12V maximum
- Drain current is 1A max at VGS = 4.5V; Tamb = 25°C
- Peak drain current is 4A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Total power dissipation is 330mW max at Tamb = 25°C
- Source current is 0.4A max at Tamb = 25°C
- Total gate charge is 0.8nC typ at VDS = 15V; ID = 1A; VGS = 4.5V; Tj = 25°C
- Ambient temperature range from -55 to 150°C
技术规格
通道类型
N通道
电流, Id 连续
1A
晶体管封装类型
SOT-23
Rds(on)测试电压
4.5V
功率耗散
480mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
漏源电压, Vds
30V
漏源接通状态电阻
0.27ohm
晶体管安装
表面安装
阈值栅源电压最大值
1V
针脚数
3引脚
产品范围
Trench
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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产品合规证书
重量（千克）：.000151