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PSMN0R9-30YLDX
功率场效应管, MOSFET, N通道, 30 V, 100 A, 650 µohm, SOT-1023, 表面安装
399 有货
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399 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY13.220 (CNY14.9386) |
| 10+ | CNY10.090 (CNY11.4017) |
| 100+ | CNY7.700 (CNY8.701) |
| 500+ | CNY7.010 (CNY7.9213) |
| 1000+ | CNY6.770 (CNY7.6501) |
| 5000+ | CNY6.520 (CNY7.3676) |
包装规格：单件（切割供应）
最低: 1
多件: 1
CNY13.22 (CNY14.94 含税)
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产品概述
The PSMN0R9-30YLD is a 30V logic level N-channel Enhancement Mode MOSFET using NextPowerS3 technology. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. It is particularly suited to high efficiency applications at high switching frequencies. Suitable for on-board DC-to-DC solutions for server and telecommunications and secondary-side synchronous rectification in telecommunication applications.
- Avalanche rated, 100% tested at I (as) = 190A
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
- Superfast switching with soft-recovery, s-factor <gt/>1
- Low spiking and ringing for low EMI designs
- Optimised for 4.5V gate drive
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach power SO8 package
- Wave solderable exposed leads for optimal visual solder inspection
技术规格
通道类型
N通道
电流, Id 连续
100A
晶体管封装类型
SOT-1023
Rds(on)测试电压
10V
功率耗散
349W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (21-Jan-2025)
漏源电压, Vds
30V
漏源接通状态电阻
650µohm
晶体管安装
表面安装
阈值栅源电压最大值
1.5V
针脚数
4引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (21-Jan-2025)
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产品合规证书
重量（千克）：.000454