产品信息
产品概述
The FDC6420C is a 20V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Low gate charge
- High performance trench technology for extremely low RDS (on)
技术规格
互补N与P沟道
20V
3A
0.07ohm
3A
表面安装
0.07ohm
SuperSOT
960mW
960mW
-
-
No SVHC (27-Jun-2024)
互补N与P沟道
20V
20V
3A
0.07ohm
4.5V
900mV
6引脚
960mW
150°C
-
MSL 1 -无限制
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书