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2N7000-D26Z
功率场效应管, MOSFET, N通道, 60 V, 200 mA, 5 ohm, TO-92, 通孔
11,577 有货
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9616 件可于 5-6 个工作日内送达(英国 库存)
1961 件可于 5-6 个工作日内送达(美国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY2.000 (CNY2.260) |
| 50+ | CNY1.800 (CNY2.034) |
| 100+ | CNY1.590 (CNY1.7967) |
| 500+ | CNY1.230 (CNY1.3899) |
| 1000+ | CNY1.100 (CNY1.243) |
包装规格：单件（切割供应）
最低: 5
多件: 5
CNY10.00 (CNY11.30 含税)
品項附註
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产品概述
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 312.5°C/W Thermal resistance, junction to ambient
技术规格
通道类型
N通道
电流, Id 连续
200mA
晶体管封装类型
TO-92
Rds(on)测试电压
10V
功率耗散
400mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (27-Jun-2024)
漏源电压, Vds
60V
漏源接通状态电阻
5ohm
晶体管安装
通孔
阈值栅源电压最大值
2.1V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
2N7000-D26Z 的替代之选
找到 6 件产品
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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重量（千克）：.000515