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数量 | 价钱 (含税) |
---|---|
1+ | CNY26.220 (CNY29.6286) |
10+ | CNY18.300 (CNY20.679) |
100+ | CNY14.190 (CNY16.0347) |
500+ | CNY13.430 (CNY15.1759) |
1000+ | CNY12.660 (CNY14.3058) |
产品概述
The FDB3632 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
N通道
80A
TO-263AB
10V
310W
175°C
-
Lead (27-Jun-2024)
100V
0.009ohm
表面安装
4V
3引脚
-
-
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