FDD9409-F085

FDD9409-F085 is a N-channel PowerTrench® MOSFET. Application includes automotive engine control, powertrain management, solenoid and motor drivers, electronic steering, integrated starter/alternator, distributed Power Architectures and VRM, primary switch for 12V systems.

• Drain-to-source on resistance is 2.3mohm(typ, TJ = 25°C, ID = 80A, VGS= 10V)
• 42nC typical total gate charge at 10V (VGS = 0 to 10V, VDD = 20V, ID = 80A)
• 40V minimum drain-to-source breakdown voltage (ID = 250μA, VGS = 0V)
• 1μA maximum drain-to-source leakage current (TJ = 25°C, VDS = 40V, VGS = 0V)
• Gate-to-source leakage current is ±100nA (maximum, VGS = ±20V)
• Input capacitance is 3130pF (typical, VDS = 25V, VGS = 0V, f = 1MHz)
• Output capacitance is 756pF (typical, VDS = 25V, VGS = 0V, f = 1MHz)
• Gate resistance is 2ohm (f = 1MHz, TJ = 25°C)
• Source-to-drain diode voltage is 1.25V (max, ISD = 80A, VGS = 0V)
• D-PAK(TO-252) package, operating and storage temperature range from -55 to + 175°C

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.