产品信息
产品概述
The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
技术规格
互补N与P沟道
30V
8.6A
0.017ohm
8.6A
表面安装
10V
1.6V
8引脚
2W
-
-
No SVHC (27-Jun-2024)
互补N与P沟道
30V
30V
8.6A
0.017ohm
0.017ohm
SOIC
2W
2W
150°C
-
-
FDS8858CZ 的替代之选
找到 1 件产品
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书