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数量 | 价钱 (含税) |
---|---|
5+ | CNY4.120 (CNY4.6556) |
10+ | CNY2.630 (CNY2.9719) |
100+ | CNY2.020 (CNY2.2826) |
500+ | CNY1.880 (CNY2.1244) |
2500+ | CNY1.820 (CNY2.0566) |
7500+ | CNY1.760 (CNY1.9888) |
20000+ | CNY1.700 (CNY1.921) |
37500+ | CNY1.640 (CNY1.8532) |
产品概述
The MC33172DR2G is a low power monolithic dual Operational Amplifier operates at 180μA per amplifier and offer 1.8MHz of gain bandwidth product and 2.1V/μs slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common-mode input voltage includes ground potential (VEE). With a Darlington input stage, this device exhibit high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no dead-band crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
- Output short-circuit protection
- Wide input common mode range, including ground (VEE)
- 2mV Low input offset voltage
- 0 to 500pF Large capacitance drive capability
- 0.03% Low total harmonic distortion
- 60° Excellent phase margin
- 15dB Excellent gain margin
技术规格
2放大器
2.1V/µs
SOIC
低功耗
2mV
表面安装
85°C
-
No SVHC (27-Jun-2024)
-
2个放大器
1.8MHz
± 1.5V 至 ± 22V
8引脚
-
20nA
-40°C
-
-
SOIC
1.8MHz
2.1V/µs
MC33172DR2G 的替代之选
找到 1 件产品
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书