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数量 | 价钱 (含税) |
---|---|
100+ | CNY1.210 (CNY1.3673) |
500+ | CNY0.778 (CNY0.8791) |
5000+ | CNY0.739 (CNY0.8351) |
15000+ | CNY0.699 (CNY0.7899) |
40000+ | CNY0.660 (CNY0.7458) |
75000+ | CNY0.621 (CNY0.7017) |
产品概述
The NSR01L30NXT5G is a Schottky Barrier Diode optimized for low forward voltage drop and low leakage current. This DSN2 (Dual Silicon No-lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic moulded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. It is used in LCD and keypad backlighting, camera photo flash, buck and boost DC-DC converter, reverse voltage and current protection, clamping & protection, mobile handsets, mp3 players, digital camera and camcorders, notebook PCs & PDAs and GPS.
- 400mV at 10mA Very low forward voltage drop
- 0.2A at 10V Low reverse current VR
- Class 3B human body model & Class C machine model ESD rating
- Power dissipation of 312mW with minimum trace
- Very high switching speed
- 7pF Low capacitance CT
- Halide-free/Pb-free device
技术规格
单
100mA
4A
201
-
NSR01
No SVHC (27-Jun-2024)
30V
530mV
150°C
2引脚
表面安装
-
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书