打印页面
NTJD1155LT1G
双路场效应管, MOSFET, 互补N与P沟道, 8 V, 8 V, 1.3 A, 1.3 A, 0.13 ohm
产品信息
制造商ONSEMI
制造商产品编号NTJD1155LT1G
库存编号2825209
技术数据表
通道类型互补N与P沟道
漏源电压Vds N沟道8V
漏源电压Vds P沟道8V
连续漏极电流 Id N沟道1.3A
连续漏极电流 Id P沟道1.3A
漏源通态电阻N沟道0.13ohm
漏源导通电阻P沟道0.13ohm
晶体管封装类型SC-88
针脚数6引脚
耗散功率N沟道400mW
耗散功率P沟道400mW
工作温度最高值150°C
产品范围-
合规-
MSLMSL 1 -无限制
SVHC(高度关注物质)No SVHC (27-Jun-2024)
产品概述
The NTJD1155LT1G is a P and N-channel Power MOSFET particularly suited for portable electronic equipment's where low control signals, low battery voltages and high load currents are needed. The P-channel device is specifically designed as a load switch using state-of-the-art Trench technology. The N-channel, with an external resistor (R1), functions as a level-shift to drive the P-channel. The N-channel MOSFET has internal ESD protection and it can be driven by logic signals as low as 1.5V. The NTJD1155L operates on supply lines from 1.8 to 8V and can drive loads up to 1.3A with 8V applied to both VIN and VON/OFF.
- Extremely low RDS (ON) P-channel load switch MOSFET
- Level shift MOSFET is ESD protected
- Low profile, small footprint package
- 1.5 to 8V ON/OFF range
- -55 to 150°C Operating junction temperature range
技术规格
通道类型
互补N与P沟道
漏源电压Vds P沟道
8V
连续漏极电流 Id P沟道
1.3A
漏源导通电阻P沟道
0.13ohm
针脚数
6引脚
耗散功率P沟道
400mW
产品范围
-
MSL
MSL 1 -无限制
漏源电压Vds N沟道
8V
连续漏极电流 Id N沟道
1.3A
漏源通态电阻N沟道
0.13ohm
晶体管封装类型
SC-88
耗散功率N沟道
400mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (27-Jun-2024)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下载产品合规证书
产品合规证书
重量（千克）：.0004