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NTMFS5C426NT1G
功率场效应管, MOSFET, N通道, 40 V, 235 A, 0.0011 ohm, DFN, 表面安装
产品概述
NTMFS5C426NT1G is a single N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- Continuous drain current is 235A at (TC = 25°C)
- Drain-to-source breakdown voltage is 40V minimum at (VGS = 0V, ID = 250µA)
- Zero gate voltage drain current is 10µA maximum at (TJ = 25°C)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Threshold temperature coefficient is -8.6mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 1.1mohm typical at (VGS = 10V, ID = 50A)
- Input capacitance is 4300pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Turn-on delay time is 15ns typical at (VGS = 10V, VDS = 20V, ID = 50A, RG = 2.5 ohm)
- Rise time is 47ns typical at (VGS = 10V, VDS = 20V, ID = 50A, RG = 2.5 ohm)
- Junction temperature range from -55°C to +175°C, DFN5 package
技术规格
通道类型
N通道
电流, Id 连续
235A
晶体管封装类型
DFN
Rds(on)测试电压
10V
功率耗散
128W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (27-Jun-2024)
漏源电压, Vds
40V
漏源接通状态电阻
0.0011ohm
晶体管安装
表面安装
阈值栅源电压最大值
3.5V
针脚数
5引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
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产品合规证书
重量（千克）：.000074