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654 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY16.440 (CNY18.5772) |
10+ | CNY12.330 (CNY13.9329) |
100+ | CNY9.340 (CNY10.5542) |
500+ | CNY9.150 (CNY10.3395) |
1500+ | CNY8.960 (CNY10.1248) |
3000+ | CNY8.770 (CNY9.9101) |
4500+ | CNY8.570 (CNY9.6841) |
包装规格:单件(切割供应)
最低: 1
多件: 1
CNY16.44 (CNY18.58 含税)
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产品概述
NTMFS6H801NT1G is a single N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- 157A continuous drain current
- Drain-to-source breakdown voltage is 80V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Threshold temperature coefficient is 7.2mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 2.3mohm typical at (VGS = 10V, ID = 50A)
- Input capacitance is 4120pF typical at (VGS = 0V, f = 1MHz, VDS = 40V)
- Turn-on delay time is 25ns typical at (VGS = 10V, VDS = 64V, ID = 50A, RG = 2.5 ohm)
- Rise time is 74ns typical at (VGS = 10V, VDS = 64V, ID = 50A, RG = 2.5 ohm)
- Zero gate voltage drain current is 10µA maximum at (TJ = 25°C)
- Junction temperature range from -55°C to +175°C, DFN5 package
技术规格
通道类型
N通道
电流, Id 连续
157A
晶体管封装类型
DFN
Rds(on)测试电压
10V
功率耗散
166W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (27-Jun-2024)
漏源电压, Vds
80V
漏源接通状态电阻
0.0023ohm
晶体管安装
表面安装
阈值栅源电压最大值
4V
针脚数
5引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
NTMFS6H801NT1G 的替代之选
找到 1 件产品
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
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产品合规证书
重量(千克):.000024