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NVMFD5C446NLT1G
双路场效应管, MOSFET, N通道, 40 V, 40 V, 145 A, 145 A, 0.0022 ohm
产品信息
制造商ONSEMI
制造商产品编号NVMFD5C446NLT1G
库存编号2835598
技术数据表
通道类型N通道
漏源电压Vds N沟道40V
漏源电压Vds P沟道40V
连续漏极电流 Id N沟道145A
连续漏极电流 Id P沟道145A
漏源通态电阻N沟道0.0022ohm
漏源导通电阻P沟道0.0022ohm
晶体管封装类型DFN
针脚数8引脚
耗散功率N沟道125W
耗散功率P沟道125W
工作温度最高值175°C
产品范围-
合规-
MSLMSL 1 -无限制
SVHC(高度关注物质)Lead (27-Jun-2024)
产品概述
NVMFD5C446NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 40V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -5.2mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 2.2mohm typical at (VGS = 10V, ID = 20A)
- Input capacitance is 3170pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 7nC typical at (VGS = 4.5V, VDS = 32V; ID = 50A)
- Turn-on delay time is 14.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Rise time is 16.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
技术规格
通道类型
N通道
漏源电压Vds P沟道
40V
连续漏极电流 Id P沟道
145A
漏源导通电阻P沟道
0.0022ohm
针脚数
8引脚
耗散功率P沟道
125W
产品范围
-
MSL
MSL 1 -无限制
漏源电压Vds N沟道
40V
连续漏极电流 Id N沟道
145A
漏源通态电阻N沟道
0.0022ohm
晶体管封装类型
DFN
耗散功率N沟道
125W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (27-Jun-2024)
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
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产品合规证书
重量（千克）：.000012