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NVTFS5116PLTAG
功率场效应管, MOSFET, P通道, 60 V, 6 A, 0.052 ohm, WDFN, 表面安装
产品概述
NVTFS5116PLTAG is a single P-channel, power MOSFET. It has low RDS(on) to minimize conduction losses and low capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is -60V minimum at (VGS = 0 V, ID = 250µA)
- Gate-to- source leakage current is ±100nA maximum at (VDS = 0V, VGS = 20V)
- Drain-to-source on resistance is 37mohm typical at (VGS = -10V, ID = -7A)
- Input capacitance is 1258pF typical at (VGS = 0V, f = 1MHz, VDS = -25V)
- Total gate charge is 25nC typical at (VGS = -10V, VDS = -48V, ID = -7A)
- Turn-on delay time is 14ns typical at (VGS = -4.5V, VDS = -48V, ID = -7A)
- Rise time is 68ns typical at (VGS = -4.5V, VDS = -48V, ID = -7A)
- Operating junction temperature range from -55°C to +175°C
- WDFN8 package
技术规格
通道类型
P通道
电流, Id 连续
6A
晶体管封装类型
WDFN
Rds(on)测试电压
10V
功率耗散
3.2W
工作温度最高值
175°C
合规
AEC-Q101
SVHC(高度关注物质)
Lead (27-Jun-2024)
漏源电压, Vds
60V
漏源接通状态电阻
0.052ohm
晶体管安装
表面安装
阈值栅源电压最大值
3V
针脚数
8引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
NVTFS5116PLTAG 的替代之选
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
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重量（千克）：.000072