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FDG6332C
双路场效应管, MOSFET, 互补N与P沟道, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
FDG6332C 的替代之选
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产品概述
The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
互补N与P沟道
漏源电压Vds P沟道
20V
连续漏极电流 Id P沟道
700mA
漏源导通电阻P沟道
0.18ohm
针脚数
6引脚
耗散功率P沟道
300mW
产品范围
-
湿气敏感性等级
MSL 1 -无限制
漏源电压Vds N沟道
20V
连续漏极电流 Id N沟道
700mA
漏源通态电阻N沟道
0.18ohm
晶体管封装类型
SC-70
耗散功率N沟道
300mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (23-Jan-2024)
相关产品
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (23-Jan-2024)
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重量（千克）：.000454