FDMT80080DC

FDMT80080DC is a N-channel dual Cool™ 88 PowerTrench® MOSFET. It is produced using Fairchild semiconductor’s advanced PowerTrench® process. Advancements in both silicon and dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low junction-to-ambient thermal resistance. Application includes OringFET / Load switching, synchronous rectification, DC-DC conversion.

• Advanced package and silicon combination for low rDS(on) and high efficiency
• Next generation enhanced body diode technology, engineered for soft recovery
• 100% UIL tested
• Drain to source breakdown voltage is 80V (min, ID = 250μA, VGS = 0V, TJ = 25°C)
• Gate to source leakage current is 100nA (max, VGS = ±20V, VDS = 0V, TJ = 25°C)
• Gate to source threshold voltage is 3.1V (typ, VGS = VDS, ID = 250μA)
• Input capacitance is 14800pF (min, VDS = 40V, VGS = 0V, f = 1MHz)
• Gate resistance is 1.8ohm (typ, TJ = 25°C)
• Turn-on delay time is 67ns (typ, VDD = 40V, ID = 36A, VGS = 10V, RGEN = 6ohm)
• Dual Cool™ package, operating and storage junction temperature range from -55 to +150°C