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FGA25N120ANTDTU
IGBT, 25 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚
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已停产
产品概述
The FGA25N120ANTD is a 1200V, 25A NPT Trench IGBT in through hole TO-3P package. IGBT offers superior conduction, switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application.
- Collector emitter voltage VCES is 1.2KV
- Collector current at 25°C is 50A
- Diode continuous forward current at 25°C is 50A
- Operating junction temperature range from - 55°C to 150°C
- Maximum power dissipation at 25°C is 312W
- Collector to emitter saturation voltage is 2.65V at IC = 50 A
- Maximum diode forward voltage is 3V at IF = 25A
- Diode peak reverse recovery current is 40A
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
连续集电极电流
25A
功率耗散
312W
晶体管封装类型
TO-3P
工作温度最高值
150°C
产品范围
Compute Module 3+ Series
SVHC(高度关注物质)
Lead (17-Jan-2022)
集电极-发射极饱和电压
2.5V
最大集电极发射电压
1.2kV
针脚数
3引脚
晶体管安装
通孔
湿气敏感性等级
-
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (17-Jan-2022)
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重量（千克）：.005433