打印页面
FQPF10N20C
功率场效应管, MOSFET, N通道, 200 V, 9.5 A, 0.29 ohm, TO-220F, 通孔
已停产
产品概述
The FQPF10N20C is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 20nC typical low gate charge
- 40.5pF typical low Crss
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
9.5A
晶体管封装类型
TO-220F
Rds(on)测试电压
10V
功率耗散
38W
工作温度最高值
150°C
合规
-
漏源电压, Vds
200V
漏源接通状态电阻
0.29ohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
-
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
下载产品合规证书
产品合规证书
重量（千克）：.006804