NCP51705MNTXG

NCP51705MNTXG is a single 6A high-speed, low-side SiC MOSFET driver. It is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable of delivering the maximum allowable gate voltage to the SiC MOSFET device. By providing a high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dV/dt immunity, and even faster turn-off, it can utilize its onboard charge pump to generate a user-selectable negative voltage rail. For full compatibility and to minimize the complexity of the bias solution in isolated gate drive applications, it also provides an externally accessible 5V rail to power the secondary side of digital or high-speed opto isolators. It offers important protection functions such as under-voltage lockout monitoring for the bias power. Typical applications include driving SiC MOSFET, industrial inverters, motor drivers, PFC, AC to DC, and DC to DC converters.

• High peak output current with split output stages to allow independent turn-ON/Turn-OFF adjustment
• Source capability is 6A, sink capability is 6A
• Extended positive voltage rating for efficient SiC MOSFET operation during the conduction period
• User-adjustable built-in negative charge pump for fast turn-off and robust dV/dt immunity
• Accessible 5V reference / bias rail for digital oscillator supply
• Adjustable under-voltage lockout, desaturation function, thermal shutdown function (TSD)
• Operating VDD supply current is 12mA typ (fIN = 100KHz, VEESET = 5V, TA=25°C)
• Source current for UV voltage set range from 22 to 28µA (VUVSET = 3µV, TA=25°C)
• Oscillator switching frequency for charge pump range from 350 to 430KHz (TA=25°C)
• WQFN24 package, operating ambient temperature range from -40 to 125°C