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数量 | 价钱 (含税) |
---|---|
100+ | CNY12.330 (CNY13.9329) |
500+ | CNY11.510 (CNY13.0063) |
1000+ | CNY11.290 (CNY12.7577) |
2000+ | CNY11.100 (CNY12.543) |
3000+ | CNY11.090 (CNY12.5317) |
产品概述
NCV57100DWR2G is a high current single channel IGBT / SiC / MOSFET driver with internal galvanic isolation. It is designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and READY outputs, active MILLER CLAMP, accurate UVLOs, DESAT protection and DESAT diagnostic function, soft turn off at DESAT, disable output function and separate high and low (OUTH and OUTL) driver outputs (NCx57100) for system design convenience. The device accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. It provides > 5KVrms (UL1577 rating) galvanic isolation and > 1424 VPK (working voltage) capabilities. Applications include automotive applications, solar inverters, industrial power supplies, motor control, welding, uninterruptible power supplies (UPS).
- Low output impedance for enhanced power switch driving
- Short propagation delays with accurate matching
- Active miller clamp to prevent spurious gate turn−on
- DESAT protection with programmable delay, DESAT diagnostic function (DSCHK)
- Output disable function, negative voltage (down to -8V) capability for DESAT
- Soft turn off during power switch short circuit, gate clamping during short circuit
- Tight UVLO thresholds for bias flexibility, wide bias voltage range including negative VEE2
- 3.3V to 5V input supply voltage, designed for AEC−Q100 certification
- High transient immunity, high electromagnetic immunity
- Ambient temperature range from -40 to 125°C, SOIC−16 wide body package
技术规格
1放大器
-
16引脚
表面安装
7.8A
3.3V
-40°C
70ns
-
隔离式
IGBT, MOSFET, SiC MOSFET
WSOIC
反相, 非反相
7.1A
5V
125°C
70ns
AEC-Q100
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书