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产品概述
SBAS16HT1G is a switching diode. It is AEC-Q101 qualified and PPAP capable.
- Continuous reverse voltage is 100V
- Peak forward current is 200mA
- Repetitive peak forward current is 1A
- Reverse voltage leakage current is 1µAdc maximum at (VR = 100Vdc, TA = 25°C)
- Reverse breakdown voltage is 100VDC minimum at (TA = 25°C)
- Forward voltage is 715mW maximum at (TA = 25°C)
- Diode capacitance is 2pF maximum at (VR = 0, f = 1MHz)
- Forward recovery voltage is 1.75VDC maximum at (IF = 10mAdc, tr = 20ns)
- Reverse recovery time is 6ns maximum at (IF = IR = 10mAdc, RL = 50 ohm)
- Junction temperature range from -55°C to 150°C, SOD-323 package
技术规格
二极管配置
单
平均正向电流
200mA
反向恢复时间
6ns
工作温度最高值
150°C
针脚数
2引脚
产品范围
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
反向重复峰值电压
100V
最大正向电压
1.25V
正向浪涌电流
36A
二极管封装类型
SOD-323
二极管安装
表面安装
合规
AEC-Q101
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
税则号:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量(千克):.000833