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数量 | 价钱 (含税) |
---|---|
1+ | CNY24.350 (CNY27.5155) |
10+ | CNY24.200 (CNY27.346) |
25+ | CNY24.050 (CNY27.1765) |
50+ | CNY23.890 (CNY26.9957) |
100+ | CNY23.740 (CNY26.8262) |
250+ | CNY23.590 (CNY26.6567) |
500+ | CNY23.420 (CNY26.4646) |
产品信息
产品概述
S25FL128SAGBHI200 is a SPI multi-I/O, 3.0V flash memory. This device connects to a host system via a SPI. Traditional SPI single-bit serial input and output (single I/O or SIO) is supported as well as optional two-bit (dual I/O or DIO) and four-bit (quad I/O or QIO) serial commands. This multiple-width interface is called SPI multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Executing code directly from flash memory is often called eXecute-in-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. It offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications.
- 128Mb density, 65nm MIRRORBIT™ process technology
- 133MHz speed, 2.7V to 3.6V / 1.65V to 3.6V VIO supply voltage
- 6Mbps (50MHz) normal read speed (SDR), 17Mbps (133MHz) fast read speed (SDR)
- 26Mbps (104MHz) dual read speed (SDR), 52Mbps (104MHz) quad read speed (SDR)
- 20Mbps (80MHz) fast read speed (DDR), 40Mbps (80MHz) dual read speed (DDR)
- Advanced sector protection, auto boot mode
- Erase suspend/resume, program suspend/resume
- 100,000 minimum program-erase cycles, 20 year minimum data retention
- Industrial temperature range from -40°C to +85°C
- 24-ball BGA package
技术规格
串行NOR
16M x 8位
BGA
133MHz
2.7V
3V
-40°C
3V Serial NOR Flash Memories
No SVHC (21-Jan-2025)
128Mbit
SPI
24引脚
-
3.6V
表面安装
85°C
MSL 3 - 168小时
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书