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数量 | 价钱 (含税) |
---|---|
1+ | CNY41.940 (CNY47.3922) |
10+ | CNY32.150 (CNY36.3295) |
25+ | CNY29.760 (CNY33.6288) |
50+ | CNY29.260 (CNY33.0638) |
100+ | CNY28.760 (CNY32.4988) |
250+ | CNY28.260 (CNY31.9338) |
500+ | CNY27.750 (CNY31.3575) |
产品信息
产品概述
PWD5T60TR is a three-phase high-density power driver integrating gate driver and six N-channel power MOSFETs. The PWD5T60 is the optimal solution for motor drive applications such as fans, pumps and small appliances. The integrated power MOSFETs have RDS(on) of 1.38 ohm and 500V blocking voltage. The high integration of the device allows to efficiently drive loads with reduced footprint, making PWD5T60 the optimal solution for space constrained applications. This device has dedicated input pins for each output and a shutdown pin. The logic inputs are CMOS/TTL compatible down to 3.3V for easy interfacing with control devices. Matched delays between low-side and high-side sections guarantee no cycle distortion and allow high-frequency operation. Applications include 3-phase inverters, fans and pumps, home and industrial appliances, refrigerator compressors.
- Wide input supply voltage range from 9V to 20V, integrated zero-drop bootstrap diodes
- Comparator for fast overcurrent protection with Smart ShutDown functionality
- Overtemperature protection, 3.3V, 5V TTL/CMOS inputs with hysteresis
- Matched propagation delay for all channels, UVLO function on low-side and high-side
- Interlocking and deadtime functions, dedicated enable pin
- Very compact and simplified layout, VCC UVLO hysteresis is 0.5V typical at (TJ = +25°C)
- VCC quiescent supply current is 1125µA typical at (EN = 5 V; CIN = SGND LVG & HVG: OFF)
- Drain-source breakdown voltage is 600V minimum at (ID = 1mA, TJ = +25°C)
- OD slew rate is 60V/µs typical at (CL = 1nF; Rpu = 33Kohm to 5V; 90% to 10% OD)
- Junction temperature range from -40°C to 125°C, VFQFPN package
技术规格
全桥电机驱动器
3输出
400V
38引脚
20V
125°C
-
三相无刷直流
3.5A
VFQFPN
9V
-40°C
-
No SVHC (21-Jan-2025)
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法律与环境
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