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数量 | 价钱 (含税) |
---|---|
1+ | CNY35.260 (CNY39.8438) |
10+ | CNY30.850 (CNY34.8605) |
25+ | CNY25.560 (CNY28.8828) |
50+ | CNY22.920 (CNY25.8996) |
100+ | CNY21.160 (CNY23.9108) |
250+ | CNY19.750 (CNY22.3175) |
500+ | CNY18.690 (CNY21.1197) |
1000+ | CNY17.980 (CNY20.3174) |
产品概述
STGAP2SICSNTR is a galvanically isolated 4A single gate driver for SiC MOSFETs. It provides galvanic isolation between the gate driving channel and the low-voltage control and interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high-power applications such as power conversion and motor driver inverters in industrial applications. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. Typical applications are motor drivers for home appliances, factory automation, industrial drives, and fans, 600/1200V inverters, battery chargers, induction heating, welding, UPS, power supply units, DC-DC converters, and power factor correction.
- Driver current capability: 4A sink/source at 25°C
- dV/dt transient immunity ±100V/ns in full temperature range
- Overall input-output propagation delay is 75ns
- UVLO function, gate driving voltage up to 26V
- Temperature shut-down protection, standby function
- 4.8kVPK isolation, UL 1577 recognized
- Maximum switching frequency is 1MHz
- Common-mode transient immunity, dVISO/dt is 100V/ns minimum (VCM = 1500V)
- GON-GOFF output configuration, SO-8 package
- Operating junction temperature range from -40 to 125°C
技术规格
1放大器
隔离型
8引脚
表面安装
4A
3.1V
-50°C
75ns
-
MSL 3 - 168小时
隔离式
SiC MOSFET
SOIC
-
4A
5.5V
150°C
75ns
-
No SVHC (21-Jan-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书