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数量 | 价钱 (含税) |
---|---|
1+ | CNY20.130 (CNY22.7469) |
10+ | CNY15.670 (CNY17.7071) |
25+ | CNY14.350 (CNY16.2155) |
50+ | CNY13.620 (CNY15.3906) |
100+ | CNY12.890 (CNY14.5657) |
250+ | CNY12.160 (CNY13.7408) |
500+ | CNY11.940 (CNY13.4922) |
1000+ | CNY11.710 (CNY13.2323) |
产品信息
产品概述
TSB582IDT is a unity gain stable, dual operational amplifier with high voltage and high current capability, featuring internal protections against over temperature and current overload conditions. In addition, this has enhanced ESD and RF noise immunity. It typically outputs up to 200mA per channel to drive low-resistance inductive loads such as angle resolvers, lineout cables, and piezo actuators. The two high current output amplifiers of the TSB582 feature the advantage of driving loads directly in bridge tied mode or, connected in parallel, allow to double the output sink/source current. Application includes servo driver, valve driverm, DC power supply, AC source, portable instrumentation, line drivers, motor control, angle resolver, LED driver, industrial process control.
- Wide supply voltage range from 4V to 36V, rail-to-rail output, low rail input
- Gain bandwidth product is 3.1MHz, high slew rate is 2V/µs
- Internal thermal shutdown and output current limiter
- Enhanced RF noise immunity, high tolerance to ESD is 4KV HBM
- Low noise is 45nV/√Hz at 1KHz, low offset is 2.4mV max. (25°C) / 3mV max. (full temperature range)
- Icc (typ.) is 2.3mA
- Low offset 2.4mV max. (25°C) / 3mV max. (full temperature range)
- Low input bias current, unity gain stable
- SO8 exposed pad package
- Operating temperature range from -40 to 125°C
技术规格
2放大器
2V/µs
SOIC-EP
CMOS
2.4mV
表面安装
125°C
-
SOIC-EP
3.1MHz
2V/µs
3.1MHz
4V 至 36V
8引脚
轨至轨输入/输出(RRIO)
2nA
-40°C
-
No SVHC (21-Jan-2025)
-
2个放大器
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书