需要更多?
数量 | 价钱 (含税) |
---|---|
1+ | CNY15.770 (CNY17.8201) |
10+ | CNY13.800 (CNY15.594) |
50+ | CNY11.440 (CNY12.9272) |
100+ | CNY10.260 (CNY11.5938) |
250+ | CNY9.470 (CNY10.7011) |
500+ | CNY8.840 (CNY9.9892) |
1000+ | CNY8.360 (CNY9.4468) |
2500+ | CNY8.040 (CNY9.0852) |
产品信息
产品概述
The LF356N/NOPB is a monolithic JFET input precision Operational Amplifier to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
- Fast slew rate
- Wide gain bandwidth
- Low input noise voltage
- Extremely fast settling time to 0.01%
- Replace expensive hybrid and module FET op amps
- Rugged JFETs allow blow-out free handling compared with MOSFET input devices
- Excellent for low noise applications using either high or low source impedance
- New output stage allows use of large capacitive loads (5,000pF) without stability problems
- Internal compensation and large differential input voltage capability
- Green product and no Sb/Br
警告
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
注释
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
技术规格
1放大器
12V/µs
DIP
JFET
3mV
通孔安装
70°C
-
No SVHC (27-Jun-2018)
-
1个放大器
5MHz
10V 至 36V
8引脚
-
30pA
0°C
-
MSL 1 -无限制
DIP
5MHz
12V/µs
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书