TBD62003AFWG(Z,EHZ

TBD62003AFWG(Z,EHZ is a TBD62003A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.

• 7 channel sink type DMOS transistor array
• High voltage is 50V (max, Ta = 25°C), high current is 500mA/ch (max, Ta = 25°C)
• Input voltage range from 2.5 to 25V (output on, IOUT = 100mA or upper, VOUT = 2V, Ta = −40 to 85°C)
• COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
• Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, VOUT = 50V, Ta = 85°C, VIN = 0V)
• Turn on delay is 0.4μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
• Turn off delay is 0.8μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
• P-SOP16-0410-1.27-002 package, operating temperature range from -40 to 85°C

注释

Please be careful about thermal conditions during use.