TBD62384AFWG(Z,EHZ

• TBD62384A series BiCD silicon monolithic integrated circuit
• 8-ch low active sink type DMOS transistor array
• High voltage is 50V (max, Ta = 25°C), high current is 500mA/ch (max, Ta = 25°C)
• Input voltage range from -20 to VCC-3.5V (output on, IOUT = 100mA or more, VOUT=2V, Ta =−40 to 85°C)
• Output leakage current is 1.0μA (max, VOUT = 50V, Ta = 85°C, VIN = VCC = 5.5V)
• Consumption current is 70μA (max, VCC = 5.5V, VIN = 0V, per ch)
• Turn on delay is 0.6μs (typ, VCC = 5.0V, VOUT = 50V, RL = 125ohm, CL = 15pF)
• Turn off delay is 0.6μs (typ, VCC = 5.0V, VOUT = 50V, RL = 125ohm, CL = 15pF)
• P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C

注释

Please be careful about thermal conditions during use.