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产品概述
TCK423G is an overvoltage protection MOSFET gate driver IC. It has external N-channel MOSFET. Which supports MOSFET operating voltage from 2.7V to 28V with various over voltage lock out line-ups. And this features low standby current, less than 1µA, built in charge pump circuit and MOSFET gate source protection circuit. This gate driver IC is widely used in load switch circuit for mobile, wearable, and IoT equipment etc.
- Gate driver for N-channel common drain MOSFET
- Gate driver for N-channel single high side MOSFET
- High maximum input voltage is VIN max = 40V
- Gate-source protection circuit
- Operating temperature range is -40°C to 85°C
- OVLO threshold, falling is 14.29V
- External MOSFET gate source voltage is 5.6V (Control ON)
- Packaging style is TSON advance
技术规格
通道数
2放大器
驱动配置
高压侧
针脚数
6引脚
IC 外壳 / 封装
WCSP
输入类型
非反向
灌电流
-
电源电压最大值
28V
工作温度最高值
85°C
输出延迟
23µs
合规
-
栅极驱动器类型
-
电源开关类型
MOSFET
驱动器封装类型
WCSP
芯片安装
表面安装
拉电流
-
电源电压最小值
2.7V
工作温度最小值
-40°C
输入延迟
2.9ms
产品范围
-
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Japan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Japan
进行最后一道重要生产流程所在的地区
税则号:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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重量(千克):.000002