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TS1GLK64V3H
RAM存储模块, 8 GB, 1333 MHz, PC3-10600, 240针 DDR3 DIMM, 桌面DIMM
产品信息
技术文档 (2)
产品概述
The TS1GLK64V3H is a 512M x 8 DRAM high-speed low power memory DDR3 Unbuffered DIMM use DDR3 SDRAM and a 2048 bits serial EEPROM on a 240-pin printed circuit board. It is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. The synchronous design allows precise cycle control with the use of system clock. The data I/O transactions are possible on both edges of DQS, range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
- 8-bit Pre-fetch
- Internal calibration through ZQ pin
- On die termination with ODT pin
- Serial presence detect with EEPROM
- Asynchronous reset
应用
计算机和计算机周边, 便携式器材
可延期交货
由于市场条件的影响，交货时间仅供一般指导，可能会在短时间内发生变化
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| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|---|---|
| 1+ | CNY503.41 CNY568.8533 | ( ) |
| 5+ | CNY473.11 CNY534.6143 | ( ) |
| 10+ | CNY458.20 CNY517.766 | ( ) |
| 50+ | CNY445.37 CNY503.2681 | ( ) |
| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|
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