IRFD9110PBF

The IRFD9110PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.

• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175°C Operating temperature
• Easy to parallel
• Simple drive requirement
• For automatic insertion
• End stackable