产品概述
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
N通道
1.5A
SOT-223
10V
2W
150°C
-
Lead (21-Jan-2025)
100V
0.54ohm
表面安装
-
3引脚
-
-
IRFL110TRPBF 的替代之选
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Morocco
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书