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C3M0016120K
碳化硅MOSFET, 单, N通道, 115 A, 1.2 kV, 0.0223 ohm, TO-247
1,427 有货
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1427 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY660.380 (CNY746.2294) |
| 5+ | CNY597.480 (CNY675.1524) |
| 10+ | CNY534.580 (CNY604.0754) |
| 50+ | CNY533.160 (CNY602.4708) |
包装规格：每个
最低: 1
多件: 1
CNY660.38 (CNY746.23 含税)
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产品概述
C3M0016120K is a C3M™MOSFET technology N-Channel enhancement mode silicon carbide power MOSFET. Application includes solar inverters, EV motor drive, high voltage DC/DC converters, switched mode power supplies, load switch.
- 3rd generation SiC MOSFET technology, optimized package with separate driver source pin
- 0.31inch of creepage distance between drain and source, high blocking voltage with low on-resistance
- High-speed switching with low capacitances, fast intrinsic diode with low reverse recovery (Qrr)
- Reduce switching losses and minimize gate ringing, higher system efficiency
- Reduce cooling requirements, increase power density
- Increase system switching frequency
- 1200V drain - source voltage (VGS = 0V, ID = 100μA)
- 115A continuous drain current (VGS = 15V, TC = 25˚C)
- 16mohm drain-source on-state resistance (VGS = 15V, ID = 75A)
- TO 247-4 package, operating junction and storage temperature range from -40 to +175˚C
技术规格
MOSFET模块配置
单
电流, Id 连续
115A
漏源接通状态电阻
0.0223ohm
针脚数
4引脚
阈值栅源电压最大值
3.6V
工作温度最高值
175°C
SVHC(高度关注物质)
To Be Advised
通道类型
N通道
漏源电压, Vds
1.2kV
晶体管封装类型
TO-247
Rds(on)测试电压
15V
功率耗散
556W
产品范围
C3M
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:To Be Advised
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重量（千克）：.008673