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215 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY50.760 (CNY57.3588) |
10+ | CNY45.100 (CNY50.963) |
25+ | CNY44.770 (CNY50.5901) |
50+ | CNY44.440 (CNY50.2172) |
100+ | CNY43.330 (CNY48.9629) |
250+ | CNY39.010 (CNY44.0813) |
500+ | CNY38.360 (CNY43.3468) |
包装规格:每个
最低: 1
多件: 1
CNY50.76 (CNY57.36 含税)
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产品概述
AS7C4096A-12JIN is a 5.0V 4Mb (512K × 8) CMOS fast SRAM. It is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 524,288 words × 8bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. The chip enable input active-low CE permits easy memory expansion with multiple-bank memory systems. When active-low CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage.
- Center power and ground pins
- Low power consumption: 880mW/max at 10ns (active), 55mW/max CMOS (standby)
- Equal access and cycle times
- Easy memory expansion with active-low CE, active-low OE inputs
- TTL-compatible, three-state I/O
- JEDEC standard packages
- ESD protection is ≥ 2000volts
- Latch-up current is ≥ 200mA
- 12ns access time, SOJ package
- Industrial temperature range from -40°C to 85°C
技术规格
SRAM类型
异步
记忆配置
512K x 8位
针脚数
36引脚
电源电压最大值
5.5V
时钟频率最大值
-
工作温度最小值
-40°C
产品范围
-
SVHC(高度关注物质)
No SVHC (27-Jun-2024)
存储密度
4Mbit
IC 外壳 / 封装
SOJ
电源电压最小值
4.5V
额定电源电压
5V
芯片安装
表面安装
工作温度最高值
85°C
湿气敏感性等级
MSL 3 - 168小时
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423245
US ECCN:3A991.b.2.a
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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产品合规证书
重量(千克):.003094