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产品概述
The FDMC4435BZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 100% UIL tested
- 7kV typical HBM ESD protection level
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
P通道
电流, Id 连续
18A
晶体管封装类型
MLP
Rds(on)测试电压
10V
功率耗散
31W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (27-Jun-2024)
漏源电压, Vds
30V
漏源接通状态电阻
0.02ohm
晶体管安装
表面安装
阈值栅源电压最大值
1.9V
针脚数
8引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
FDMC4435BZ 的替代之选
找到 1 件产品
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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重量(千克):.000149