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FDV304P
功率场效应管, MOSFET, P通道, 25 V, 460 mA, 1.1 ohm, SOT-23, 表面安装
产品概述
The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V. FDV303P is designed for battery power applications such as notebook, cellular phones and computers.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Drain to source voltage (Vds) of -25V
- Gate to source voltage of -8V
- Continuous drain current (Id) of -460mA
- Power dissipation (pd) of 350mW
- Low on state resistance of 1.22ohm at Vgs -2.7V
- Operating temperature range -55°C to 150°C
技术规格
通道类型
P通道
电流, Id 连续
460mA
晶体管封装类型
SOT-23
Rds(on)测试电压
2.7V
功率耗散
350mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (27-Jun-2024)
漏源电压, Vds
25V
漏源接通状态电阻
1.1ohm
晶体管安装
表面安装
阈值栅源电压最大值
860mV
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
FDV304P 的替代之选
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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重量（千克）：.000045