MB85RS128BPNF-G-JNE1

The MB85RS128BPNF-G-JNE1 is a 128-Kbit SPI Ferroelectric Random Access Memory (FRAM) chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RS128B is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128B can be used for 10¹² read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM. MB85RS128B does not take long time to write data like Flash memories or E²PROM and MB85RS128B takes no wait time.

• Data retention - 10 years
• Operating power supply voltage - 2.7 to 3.6V
• Low power consumption

应用

计算机和计算机周边, 工业

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.