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| 数量 | 价钱 (含税) |
|---|---|
| 1350+ | CNY45.160 (CNY51.0308) |
产品概述
The CY62158EV30LL-45ZSXI is a 8MB high performance CMOS Static Random Access Memory (SRAM) organized as 1024K words by 8-bit. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption significantly when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or a write operation is in progress. To write to the device, take chip enables and write enable input LOW. Data on the eight I/O pins is then written into the location specified on the address pins. To read from the device, take chip enables and OE LOW while forcing the WE HIGH.
- Very high speed - 45ns
- Pin compatible with CY62158DV30
- Ultralow standby power
- Ultralow active power
- Easy memory expansion with CE and OE
- Automatic power down when deselected
- CMOS for optimum speed/power
技术规格
异步SRAM
1M x 8bit
44引脚
3.6V
-
-40°C
-
No SVHC (21-Jan-2025)
8Mbit
TSOP-II
2.2V
3V
表面安装
85°C
MSL 3 - 168小时
技术文档 (1)
CY62158EV30LL-45ZSXI 的替代之选
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法律与环境
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书