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数量 | 价钱 (含税) |
---|---|
1+ | CNY28.460 (CNY32.1598) |
10+ | CNY25.540 (CNY28.8602) |
25+ | CNY24.140 (CNY27.2782) |
50+ | CNY23.570 (CNY26.6341) |
100+ | CNY22.990 (CNY25.9787) |
250+ | CNY22.400 (CNY25.312) |
500+ | CNY21.820 (CNY24.6566) |
1000+ | CNY21.240 (CNY24.0012) |
产品概述
The IR2010PBF is a high power high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Shut down input turns OFF both channels
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
高压侧和低压侧
14引脚
通孔安装
3A
10V
-40°C
95ns
-
-
-
IGBT, MOSFET
DIP
非反向
3A
20V
125°C
65ns
-
No SVHC (21-Jan-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
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RoHS
RoHS
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