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IXFN200N10P
功率场效应管, MOSFET, 极性FET, N沟道, 100 V, 200 A, 0.0075 ohm, ISOTOP, 模块
产品范围选择器 (Polar(TM) HiPerFET)
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The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
应用
电源管理, 照明
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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
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CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
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可延期交货
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将于 21-12-19 再提供 10 件
将于 22-1-9 再提供 50 件
将于 22-7-17 再提供 10 件
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| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY187.51 (CNY211.89) | ( ) |
| 10+ | CNY172.92 (CNY195.40) | ( ) |
| 25+ | CNY165.14 (CNY186.61) | ( ) |
| 100+ | CNY147.66 (CNY166.86) | ( ) |
| 500+ | CNY137.47 (CNY155.34) | ( ) |
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