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IXFN24N100
功率场效应管, MOSFET, N沟道, 1 kV, 24 A, 0.39 ohm, ISOTOP, 模块
产品概述
The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Low RDS (ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
应用
电源管理, 工业, 电机驱动与控制
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
产品信息
技术文档 (1)
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CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
可延期交货
| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY277.52 (CNY313.60) | ( ) |
| 10+ | CNY258.88 (CNY292.53) | ( ) |
| 25+ | CNY251.80 (CNY284.53) | ( ) |
定价不可用。 请联系客户服务。
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