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IXKN75N60C
MOSFET晶体管, N沟道, 75 A, 600 V, 0.03 ohm, 10 V, 3.9 V, SOT-227B
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产品信息
制造商产品编号IXKN75N60C
库存编号3438400
产品范围CoolMOS Series
技术数据表
通道类型N通道
电流, Id 连续75A
漏源电压, Vds600V
漏源接通状态电阻0.03ohm
Rds(on)测试电压10V
阈值栅源电压最大值3.9V
功率耗散560W
工作温度最高值150°C
产品范围CoolMOS Series
SVHC(高度关注物质)No SVHC (12-Jan-2017)
产品概述
IXKN75N60C is a CoolMOS™ power MOSFET. Typical applications are switched mode power supplies (SMPS), uninterruptible power supplies (UPS), power factor correction (PFC), welding, inductive heating.
- N-channel enhancement mode, low RDSon, high VDSS
- MiniBLOC package, electrically isolated copper base
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation due to AlN ceramic substrate
- International standard package SOT-227, easy screw assembly
- High blocking capability, low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness, enhanced total power density
- Voltage rating VDSS is 600V at TVJ = 25°C to 150°C, current rating ID25 is 75A at TC = 25°C
- Resistor RDS(on) is 36mohm at VGS = 10V, ID = ID90
技术规格
通道类型
N通道
漏源电压, Vds
600V
Rds(on)测试电压
10V
功率耗散
560W
产品范围
CoolMOS Series
电流, Id 连续
75A
漏源接通状态电阻
0.03ohm
阈值栅源电压最大值
3.9V
工作温度最高值
150°C
SVHC(高度关注物质)
No SVHC (12-Jan-2017)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：South Korea
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：South Korea
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (12-Jan-2017)
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产品合规证书
重量（千克）：.004