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产品信息
制造商产品编号DS1265W-100IND+
库存编号2516535
技术数据表
存储器类型SRAM
NVRAM 内存配置1M x 8位
芯片接口类型-
封装类型EDIP
产品范围-
产品概述
The DS1265W-100IND+ is a 3.3V 8Mb non-volatile SRAM in 36 pin EDIP package. This device is organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption.
- Supply voltage range is 3V to 3.6V
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Unlimited write cycles, low power consumption
- Read and write access times of 100ns
- No additional support circuitry is required for microprocessor interfacing
- Operating temperature range from -40°C to 85°C
注释
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
技术规格
存储器类型
SRAM
芯片接口类型
-
产品范围
-
NVRAM 内存配置
1M x 8位
封装类型
EDIP
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
税则号:85423245
US ECCN:3A991.b.2.a
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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重量(千克):.000596