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PSMN011-60MLX
功率场效应管, MOSFET, N通道, 60 V, 61 A, 9100 µohm, LFPAK33, 表面安装
产品信息
制造商NEXPERIA
制造商产品编号PSMN011-60MLX
库存编号3440087
技术数据表
通道类型N通道
漏源电压, Vds60V
电流, Id 连续61A
漏源接通状态电阻9100µohm
晶体管封装类型LFPAK33
晶体管安装表面安装
Rds(on)测试电压10V
阈值栅源电压最大值1.7V
功率耗散91W
针脚数4引脚
工作温度最高值175°C
产品范围-
合规-
湿气敏感性等级MSL 1 -无限制
SVHC(高度关注物质)No SVHC (25-Jun-2025)
产品概述
PSMN011-60MLX is a logic level enhancement mode N-channel MOSFET in the LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The applications include AC-to-DC converters, synchronous rectification, and DC-DC converters.
- High efficiency due to low switching and conduction losses
- Suitable for standard level gate drive sources
- LFPAK33 package is footprint compatible with other 3.3mm types, qualified to 175°C
- Drain-source voltage is 60V max (Tj = 25°C), drain current is 61A max (VGS = 10V; Tmb = 25°C)
- Total power dissipation is 91W max (Tmb = 25°C)
- Drain-source on-state resistance is 9.35mohm typ (VGS = 10V; ID = 15A; Tj = 25°C)
- Gate-drain charge is 5.1nC typ (VGS = 4.5V; ID = 15A; VDS = 30V; Tj = 25°C)
- Peak drain current is 91W max (Tmb = 25°C)
- Source current is 70A max (Tmb = 25°C)
- 4 leads SOT1210 package, junction temperature range from -55 to 175°C
技术规格
通道类型
N通道
电流, Id 连续
61A
晶体管封装类型
LFPAK33
Rds(on)测试电压
10V
功率耗散
91W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
漏源电压, Vds
60V
漏源接通状态电阻
9100µohm
晶体管安装
表面安装
阈值栅源电压最大值
1.7V
针脚数
4引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.00001