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产品信息
制造商ONSEMI
制造商产品编号MJD112T4G
库存编号2441270
技术数据表
晶体管极性NPN
针脚数3引脚
晶体管安装表面安装
工作温度最高值150°C
产品范围-
合规-
SVHC(高度关注物质)Lead (27-Jun-2024)
产品概述
The MJD112T4G is a 2A NPN bipolar power Darlington Transistor designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- Surface-mount replacements for TIP110 to TIP117 series
- AEC-Q101 qualified and PPAP capable
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
晶体管极性
NPN
晶体管安装
表面安装
产品范围
-
SVHC(高度关注物质)
Lead (27-Jun-2024)
针脚数
3引脚
工作温度最高值
150°C
合规
-
MJD112T4G 的替代之选
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
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产品合规证书
重量(千克):.000562