NTMD5838NLR2G

• Power, dual, N-channel MOSFET
• Drain-to-source voltage is 40V (TJ = 25°C)
• Gate threshold voltage is 1.8V (typ, VGS = VDS, ID = 250µA, TJ = 25°C)
• Forward transconductance is 4.0S (typ, VDS = 15V, ID = 7A, TJ = 25°C)
• Reverse transfer capacitance is 90pF (typ, VGS = 0V, f = 1MHz, VDS = 20V, TJ = 25°C)
• Gate resistance is 1.8ohm (typ, TJ = 25°C)
• Turn-on delay time is 11ns (typ, VGS = 4.5V, VDS = 20V, ID = 7A, RG = 2.5ohm, TJ = 25°C)
• Rise time is 23ns (typ, VGS = 4.5V, VDS = 20V, ID = 7A, RG = 2.5ohm, TJ = 25°C)
• Reverse recovery time is 17ns (typ, VGS = 0V, dIS/dt = 100A/s, IS = 7A, TJ = 25°C)
• SO-8 package, operating junction and storage temperature range from -55 to +150°C

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.