BD2320UEFJ-LAE2

BD2320UEFJ-LAE2 is a 100V maximum voltage high-side and low-side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for the high-side and low-side. Under voltage lockout circuits are built in for high-side and low-side. Typical applications are power supplies for telecom and datacom, MOSFET application, half-bridge and full-bridge converters, forward converters.

• Long-time support product for industrial applications
• Under voltage lockout (UVLO) for high-side and low-side driver
• 3.3V and 5.0V interface voltage
• Output In-phase with input signal
• High-side supply voltage and floating voltage is 100V
• Output voltage range from 7.5V to 14.5V, output current Io+/Io- is 3.5A/4.5A
• Propagation delay is 27ns (typ), delay matching is 12ns (max)
• Offset voltage pin leak current is 10µA (maximum)
• Operating temperature range from -40°C to +125°C
• Dimension is 4.9mm W (typ) x 6mm D (typ) x 1mm H (max)