SIA975DJ-T1-GE3

SiA975DJ-T1-GE3 is a dual P-channel 12V (D-S) MOSFET. The applications include a load switch, PA switch, and battery switch for portable devices and game consoles.

• TrenchFET® power MOSFET, 100 % Rg tested
• New thermally enhanced PowerPAK® SC-70 package, small footprint area, low on-resistance
• Drain-source breakdown voltage is -12V min (VGS = 0V, ID = -250μA, TJ = 25°C)
• Gate-source threshold voltage range from -0.4 to -1V (VDS = VGS, ID = -250μA, TJ = 25°C)
• Continuous drain current is -4.5A (TJ = 150°C, TC = 25°C)
• Pulsed drain current is -15A (TA = 25°C)
• Continuous source-drain diode current is -4.5A max (TC = 25°C)
• Maximum power dissipation is 7.8W (TC = 25°C)
• Input capacitance is 1500pF typ (VDS = -6V, VGS = 0V, f = 1MHz, TC = 25°C)
• PowerPAK SC-70 package, operating junction temperature range from -55 to +150°C

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.