VS-C16ET07T-M3

VS-C16ET07T-M3 is a wide band gap power SiC merged PIN schottky diode. This is designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range is also recommended for all applications suffering from Silicon ultrafast recovery behaviour. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.

• Majority carrier diode using schottky technology on SiC wide band gap material
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses, temperature invariant switching behaviour
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 1A whisker test
• Current rating is 16A (TC = 121°C (DC)), voltage rating is 650V
• Forward voltage is 1.45V (typ, IF = 16A, TJ = 25°C)
• Total capacitance is 700pF (typ, VR = 1V, f = 1MHz, TJ = 25°C)
• Total capacitive charge is 45nC (typ, VR = 400V, f = 1MHz, TJ = 25°C)
• 2L TO-220AC package, operating junction and storage temperature range from -55 to +175°C

注释

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.